SI4800 |
RFQ for SI4800 Required Field |
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| Technical/Catalog Information | SI4800,518 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11.8nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT96; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SI4800,518 SI4800,518 |
| Product | Manufacturers | Pack | D/C |
| SI4800 | - | SOP | 03+ |
Typical Application |
Features |
| · DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications. | · Low on-state resistance· Fast switching· TrenchMOS™ technology. |
| Symbol | Parameter | Conditions | Typ | Max | Unit |
| VDS | drain-source voltage (DC) | Tj = 25 to 150 °C | - | 30 | V |
| ID | drain current | Tsp = 25 °C; Figure 2 and 3 | - | 9 | A |
| Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2.5 | W |
| Tj | junction temperature | 150 | °C | ||
| RDSon | drain-source on-state resistance | VGS = 10 V; ID = 9 A; Tj = 25 °C | 15.5 | 18.5 | m |
| VGS = 4.5 V; ID = 7 A; Tj = 25 °C | 27.5 | 33 |
